Sunlite Science & Technology, Inc. is an opto-electronic material and device manufacturing company founded in 1996 at the heart
of Silicon Valley - San Jose, California. In 1997, we established our LED epi-wafer and chip manufacturing facilities in Lawrence,
Kansas. and started the MOCVD process and compound semiconductor business.
In April 2000, the company won the competitive award from the Kansas Enterprises Technology Corporation to develop the
Aluminum-Indium-Gallium- Phosphide (AlInGaP) High Brightness LED (HB-LED) wafers covering the color range from yellow to
red.
In September 2000, we opened a LED chip sales office in Shanghai , P. R. China.
In October 2000, the developed AlInGaP HB-LED technology was nominated to the Twelfth Annual Meeting and Technology of the
Year Awards sponsored by the Silicon Prairie Technology Association.
The company started the development of 650nm Laser wafers in September 2001, and the Laser chips in March 2002. The Laser
chip manufacturing reached mass production stage in July 2002.
In September 2003, the company set up the fully owned assembly facility for packaging Laser chips and power LED chips at
Shanghai Suburb. Our company has the FDA access number to import 650nm <5mw Laser products to United States from China.
In November 2005, the company started to manufacture LED lighting application products, including high-end LED rechargeable
flashlights, LED penlights, UV LED Detection lights. For more details on our application products, please visit
www.powerledlighting.com
of Silicon Valley - San Jose, California. In 1997, we established our LED epi-wafer and chip manufacturing facilities in Lawrence,
Kansas. and started the MOCVD process and compound semiconductor business.
In April 2000, the company won the competitive award from the Kansas Enterprises Technology Corporation to develop the
Aluminum-Indium-Gallium- Phosphide (AlInGaP) High Brightness LED (HB-LED) wafers covering the color range from yellow to
red.
In September 2000, we opened a LED chip sales office in Shanghai , P. R. China.
In October 2000, the developed AlInGaP HB-LED technology was nominated to the Twelfth Annual Meeting and Technology of the
Year Awards sponsored by the Silicon Prairie Technology Association.
The company started the development of 650nm Laser wafers in September 2001, and the Laser chips in March 2002. The Laser
chip manufacturing reached mass production stage in July 2002.
In September 2003, the company set up the fully owned assembly facility for packaging Laser chips and power LED chips at
Shanghai Suburb. Our company has the FDA access number to import 650nm <5mw Laser products to United States from China.
In November 2005, the company started to manufacture LED lighting application products, including high-end LED rechargeable
flashlights, LED penlights, UV LED Detection lights. For more details on our application products, please visit
www.powerledlighting.com
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